 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| Fuji Discrete Package IGBT n Features * Square RBSOA * Low Saturation Voltage * Less Total Power Dissipation * Minimized Internal Stray Inductance n Outline Drawing n Applications * High Power Switching * A.C. Motor Controls * D.C. Motor Controls * Uninterruptible Power Supply n Maximum Ratings and Characteristics * Absolute Maximum Ratings Items Collector-Emitter Voltage Gate -Emitter Voltage ( Tc=25C) Symbols VCES VGES DC Tc= 25C IC 25 Collector Current DC Tc=100C IC 100 1ms Tc= 25C IC PULSE IGBT Max. Power Dissipation PC FWD Max. Power Dissipation PC Operating Temperature Tj Storage Temperature Tstg Mounting Screw Torque n Equivalent Circuit Ratings 1200 20 26 15 78 245 120 +150 -40 +150 70 Units V V A W W C C Nm * Electrical Characteristics Items Zero Gate Voltage Collector Current Gate-Emitter Leackage Current Gate-Emitter Threshold Voltage Collector-Emitter Saturation Voltage Input capacitance Output capacitance Reverse Transfer capacitance ( at Tj=25C ) Symbols ICES IGES VGE(th) VCE(sat) Cies Coes Cres tON tr tOFF tf tON tr tOFF tf VF trr Test Conditions VGE=0V VCE=1200V VCE=0V VGE= 20V VGE=20V IC=15mA VGE=15V IC=15A VGE=0V VCE=10V f=1MHz VCC=600V IC=15A VGE=15V RG=120 VCC=600V IC=15A VGE=+15V RG=12 IF=15A VGE=0V IF=15A, VGE=-10V, di/dt=100A/s Min. Typ. Max. 1.0 20 8.5 3.5 Units mA A V pF 1.2 0.6 1.5 0.5 0.16 0.11 0.30 0.5 3.0 350 5.5 1700 300 120 Turn-on Time Switching Time Turn-off Time Turn-on Time Turn-off Time Diode Forward On-Voltage Reverse Recovery Time s s V ns * Thermal Characteristics Items Thermal Resistance Symbols Rth(j-c) Rth(j-c) Test Conditions IGBT Diode Min. Typ. Max. 0.51 1.04 Units C/W Collector Current vs. Collector-Emitter Voltage 60 T j= 2 5 C 60 Collector Current vs. Collector-Emitter Voltage T j= 1 2 5 C 50 V GE = 2 0 V 1 5 V 12V 50 V GE = 2 0 V 15V [A] 40 [A] 40 12V 30 C Collector Current : I 30 20 10V 10 8V 0 0 1 2 3 4 5 6 Collector-Emitter Voltage : V CE [V] Collector Current : I C 20 10V 10 8V 0 0 1 2 3 4 5 6 Collector-Emitter Voltage : V CE [V] Collector-Emitter Voltage vs. Gate-Emitter Voltage 12 T j= 2 5 C 12 Collector-Emitter Voltage vs. Gate-Emitter Voltage T j= 1 2 5 C [V] 10 [V] CE 10 CE Collector-Emitter Voltage : V 6 Collector-Emitter Voltage : V 8 8 6 4 IC = 30A 15A 7.5A 4 I C= 30A 15A 7.5A 2 2 0 0 5 10 15 20 25 0 0 5 10 15 20 25 Gate-Emitter Voltage : V GE [V] Gate-Emitter Voltage : V GE [V] Switching Time vs. Collector Current V CC = 6 0 0 V , R G = 1 2 , V GE = 1 5 V , T j= 2 5 C 1000 Switching Time vs. Collector Current V CC = 6 0 0 V , R G = 1 2 , V GE= 1 5 V , T j= 1 2 5 C t off , t r, t off , t f [nsec] tf , t r, t off , t f [nsec] 1000 t off tf Switching Time : t on 100 t on Switching Time : t on t on tr 100 tr 10 0 5 10 15 20 25 30 0 5 10 15 20 25 30 Collector Current : I C [A] Collector Current : I C [A] Switching Time vs. R G V CC =600V, I C = 1 5 A , V GE = 1 5 V , T j= 2 5 C t on t off Switching Time vs. R G V CC =600V, I C = 1 5 A , V GE = 1 5 V , T j= 1 2 5 C t off , t r, t off , t f [nsec] 1000 , t r, t off , t f [nsec] t on 1000 tf tr tr on Switching Time : t tf 100 Switching Time : t 100 10 10 100 Gate Resistance : R G [ ] on 100 Gate Resistance : R G [ ] Capacitance vs. Collector-Emitter Voltage T j= 2 5 C 10000 1000 Dynamic Input Characteristics T j= 2 5 C 25 VCC = 400V 600V 800V [V] C res C ies [pF] Collector-Emitter Voltage : V 1000 600 15 Capacitance : C C oes 100 C res 400 10 200 5 10 0 5 10 15 20 25 30 35 0 0 50 100 150 Gate Charge : QG 200 [nQ] 0 250 Reverse Recovery Time vs. Forward Current V R= 2 0 0 V , -di Reverse Recovery Current vs. Forward Current V R= 2 0 0 V , -di 200 / dt= 1 0 0 A / s e c 10 / dt = 1 0 0 A / s e c [nsec] [A] 125C 150 8 125C rr Reverse Recovery Time : t Reverse Recovery Current : I rr 6 25C 100 25C 4 50 2 0 0 5 10 15 20 25 30 0 0 5 10 15 20 25 30 Forward Current : I F [A] Forward Current : I F [A] Gate-Emitter Voltage : V oes GE C ies CE [V] 800 20 Reverse Biased Safe Operating Area + V GE= 1 5 V , - V GE <1 5 V , T j< 1 2 5 C , R G > 1 2 35 250 Typical Short Circuit Capability V CC = 8 0 0 V , R G = 1 2 , T j= 1 2 5 C 50 t SC 30 200 40 I SC 150 30 [A] [A] SC 25 C 15 100 20 10 50 10 5 0 0 200 400 600 800 1000 1200 1400 0 5 10 15 20 [V] Gate Voltage : V GE Collector-Emitter Voltage : V CE [V] 0 25 Reverse Recovery Characteristics vs. Forward Voltage vs. Forward Current 60 25C 500 T j= 1 2 5 C I F = 1 5 A , T j= 1 2 5 C -di / dt 25 [nsec] 50 I rr [A] 40 300 15 rr 30 200 10 20 10 100 t rr 5 0 0 1 2 3 4 0 0 100 200 -di 300 / dt 400 500 0 600 Forward Voltage : V F [V] [A/sec] Transient Thermal Resistance Thermal Resistance : Rth(j-c) [C/W] FWD 10 0 IGBT 10 -1 10 -4 10 -2 10 -3 10 -2 10 -1 10 0 Pulse Width : P W [sec] Reverse Recovery Current : I Reverse Recovery Time : t Forward Current : I F rr [A] 400 20 Short Circuit Time : t Collector Current : I 20 Short Circuit Current : I SC [s] Switching losses (Eon, Eoff vs. IC) IC [A] Test Circuit Switching waveforms P.O. Box 702708-Dallas, TX 75370 Phone (972) 233-1589 Fax (972) 233-0481 www.collmer.com |
Price & Availability of 1MBH15D-120
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |